MK2

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MK2 is a high-efficiency pulse-modulated Class-E RF Power Amplifier (PA) integrated with an 11-bit Digital Pulse Modulation (DPM) unit, fabricated in 22nm FD-SOI CMOS technology. The design achieves a saturated output power (Psat) of 25.3 dBm and a peak Power Added Efficiency (PAE) of 32.3%, with an output power dynamic range of 30.4 dB. The DPM unit effectively compensates for AM-AM and AM-PM distortions while adding minimal area and efficiency overhead. Operating between 1.4 to 1.85 GHz, the PA enhances power backoff (PBO) efficiency with a power density of 0.65 W/mm². The proposed architecture combines the efficiency benefits of pulse modulation with the wide dynamic range of traditional switching PAs, making it suitable for high-data-rate systems with high peak-to-average power ratios (PAPR). The design also features a custom Parallel-Combining Transformer (PCT) that eliminates the need for external matching components, further reducing complexity and area. Measurements demonstrate significant improvements in linearity and efficiency, particularly at 6 dB PBO, outperforming conventional Class-B and Class-E PAs.

MK2 is a high-efficiency pulse-modulated Class-E RF Power Amplifier (PA) integrated with an 11-bit Digital Pulse Modulation (DPM) unit, fabricated in 22nm FD-SOI CMOS technology. The design achieves a saturated output power (Psat) of 25.3 dBm and a peak Power Added Efficiency (PAE) of 32.3%, with an output power dynamic range of 30.4 dB. The DPM unit effectively compensates for AM-AM and AM-PM distortions while adding minimal area and efficiency overhead. Operating between 1.4 to 1.85 GHz, the PA enhances power backoff (PBO) efficiency with a power density of 0.65 W/mm². The proposed architecture combines the efficiency benefits of pulse modulation with the wide dynamic range of traditional switching PAs, making it suitable for high-data-rate systems with high peak-to-average power ratios (PAPR). The design also features a custom Parallel-Combining Transformer (PCT) that eliminates the need for external matching components, further reducing complexity and area. Measurements demonstrate significant improvements in linearity and efficiency, particularly at 6 dB PBO, outperforming conventional Class-B and Class-E PAs.

MK2 is a high-efficiency pulse-modulated Class-E RF Power Amplifier (PA) integrated with an 11-bit Digital Pulse Modulation (DPM) unit, fabricated in 22nm FD-SOI CMOS technology. The design achieves a saturated output power (Psat) of 25.3 dBm and a peak Power Added Efficiency (PAE) of 32.3%, with an output power dynamic range of 30.4 dB. The DPM unit effectively compensates for AM-AM and AM-PM distortions while adding minimal area and efficiency overhead. Operating between 1.4 to 1.85 GHz, the PA enhances power backoff (PBO) efficiency with a power density of 0.65 W/mm². The proposed architecture combines the efficiency benefits of pulse modulation with the wide dynamic range of traditional switching PAs, making it suitable for high-data-rate systems with high peak-to-average power ratios (PAPR). The design also features a custom Parallel-Combining Transformer (PCT) that eliminates the need for external matching components, further reducing complexity and area. Measurements demonstrate significant improvements in linearity and efficiency, particularly at 6 dB PBO, outperforming conventional Class-B and Class-E PAs.